Ultraviolet electroluminescence from n-ZnO/i-MgO/p+-GaN heterojunction light-emitting diodes fabricated by RF-magnetron sputtering |
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| Authors: | G Y Zhu J T Li Z L Shi Y Lin G F Chen T Ding Z S Tian C X Xu |
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| Institution: | 1. State Key Laboratory of Bioelectronics, and Advanced Photonics Center, School of Biological Science and Medical Engineering, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People??s Republic of China
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| Abstract: | Based on the easily controllable radio frequency magnetron sputtering, n-ZnO and i-MgO thin films were fabricated on p+-GaN substrate to construct heterojunctional light-emitting diodes for ultraviolet emission from the near band edge exciton recombination of ZnO. Effects of the insulator MgO layer on the electroluminescent performance of the n-ZnO/i-MgO/p+-GaN light-emitting diodes have been investigated. It was found that the light-emitting diode presented stronger near band-edge emission with blue shift emission peak under the lower working current when i-MgO layer was inserted. The fabrication process, characteristics and the mechanism were discussed in detail. |
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