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Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes |
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| Authors: | R Dylewicz A Z Khokhar R Wasielewski P Mazur F Rahman |
| Institution: | 1. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, UK 2. Lam Research AG, Villach, Austria 4. Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204, Wroclaw, Poland 3. Electrospell Ltd. Block 7, Kelvin Campus, West of Scotland Science Park, Glasgow, G20 0SP, UK |
| Abstract: | We describe the fabrication and characterization of a randomly etched gallium nitride (GaN) surface for enhancing light extraction from light-emitting diodes. Our technique uses silica spheres as nano-targets in a sputter-etch process and produces a fine-grained surface with features around 35 nm. The textured surface layer acts as a graded refractive index layer with antireflection properties. Measurements show that photoluminescence intensity from such treated surfaces on a GaN LED wafer increases 2.2?times over that from pristine surfaces. These findings are also supported by computer modelling studies described here. |
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