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Tellurium and sulfur doped GaSe for mid-IR applications
Authors:Z.-H. Kang  J. Guo  Z.-S. Feng  J.-Y. Gao  J.-J. Xie  L.-M. Zhang  V. Atuchin  Y. Andreev  G. Lanskii  A. Shaiduko
Affiliation:1. Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Road, Changchun, 130023, China
2. State Key Laboratory of Laser Interaction with Matter, Changchun Institute of Optics, Fine Mechanics and Physics of Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun, 130033, China
3. Aviation University of Air Force, 2222 Nanhu Road, Changchun, 130022, People??s Republic of China
4. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia
5. Laboratory of Geosphere?CBiosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems SB RAS, 10/3 Akademichesky Avenue, Tomsk, 634055, Russia
Abstract:Centimeter-sized Te:GaSe (??10?mass%) ingots have been grown by the vertical Bridgman technique and studied to reveal the potentials for phase matching and frequency conversion. Less than 5 mass% Te-doped crystals show the hexagonal structure like ??-GaSe. Te:GaSe (??2?mass%) crystals were suitable for non-linear applications. The optimal Te-doping level between 0.1 and 0.5 mass% has been clearly observed in CO2 laser SHG experiment. The CO2 laser SHG efficiency in Te:GaSe (0.1?C0.5 mass%) is ??20?% higher than that of GaSe due to better optical quality. Phase matching conditions in Te-doped crystals have been shown to be identical with those of GaSe.
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