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CdSxSe1-x纳米微晶的辐射跃迁过程
引用本文:孙聆东,席淑珍.CdSxSe1-x纳米微晶的辐射跃迁过程[J].发光学报,1996,17(1):1-5.
作者姓名:孙聆东  席淑珍
作者单位:1. 中国科学院激发态物理开放实验室, 长春130021;2. 中国科学院长春光机所应用光学实验室, 长春130021
摘    要:利用变温吸收光谱和光致发光光谱研究了CdSxSe1-x纳米微晶的辐射跃迁过程.由Varshni公式,拟合了微晶的吸收峰随温度的变化.根据变温发射光谱,研究了发光峰位置和温度的依赖关系,并分析了吸收峰和发光峰随温度变化的快慢.对发光的动力学过程.作了简单的分析.

关 键 词:吸收光谱  发射光谱  辐射中心
收稿时间:1995-01-23

RADIATIVE TRANSITION PROCESSES OF CdSxSe1-x SEMICONDUCTOR NANOCRYSTALLITES
Sun Lingdong,Zhao Jialong,Jin Chunming,Don Kai,Chen Yimin,Huang Shihua,Yu Jiaqi,Xi Shuzhen,Li Lei.RADIATIVE TRANSITION PROCESSES OF CdSxSe1-x SEMICONDUCTOR NANOCRYSTALLITES[J].Chinese Journal of Luminescence,1996,17(1):1-5.
Authors:Sun Lingdong  Zhao Jialong  Jin Chunming  Don Kai  Chen Yimin  Huang Shihua  Yu Jiaqi  Xi Shuzhen  Li Lei
Institution:1. Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130021;2. Changchun Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Changchun 130022
Abstract:Temperature dependence absorption and photoluminescence spectra were used to study the radiative transition processes of CdSxSe1-x nanocrystallites. The relationship between the absorption peak and temperature was fitted using Varshni equation. The results imply that the temperature dependence of absorption peak is the same as that of bulk semiconductor. From the temperature dependence photoluminescence, the relationship between photoluminescence peaks and temperature was obtained and the variationrate was analysed. The dynamics of PL process can also be elucidated simply by the temperature dependence of the process.
Keywords:absorption spectra          photoluminescence spectra          radiative centre
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