| ZnS:Tb薄膜电致发光的量子效率及过热电子分布 |
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| 引用本文： | 赵伟明 唐春玖. ZnS:Tb薄膜电致发光的量子效率及过热电子分布[J]. 发光学报, 1996, 17(1): 38-42 |
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| 作者姓名： | 赵伟明 唐春玖 |
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| 作者单位： | 上海大学嘉定校区材料科学系, 上海201800 |
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| 摘 要： | 采用高频溅射的方法制备了高亮度的ZnS:Tb薄膜电致发光器件.测量了发射强度比I(5D3-7F6)/I(5D4-7F4)随激发电压的变化关系、弛豫时间及发光的量子效率,计算了碰撞截面,分析ZnS:Tb的过热电子的分布,并与ZnS:Mn进行了比较.指出了ZnS:Tb效率与ZnS:Mn效率差异的可能原因.
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| 关 键 词： | ZnS:Tb 薄膜 电致发光 量子效率 过热电子分布 |
| 收稿时间： | 1995-03-27 |
THE QUANTUM EFFICIENCY AND HOT ELECTRON DISTRIBUTION OF ZnS:Tb TFEL DEVICES |
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| Zhao Weiming,Tang Chunjiu,Jiang Xueyin,Zhang Zhilin,Xu Shaohong. THE QUANTUM EFFICIENCY AND HOT ELECTRON DISTRIBUTION OF ZnS:Tb TFEL DEVICES[J]. Chinese Journal of Luminescence, 1996, 17(1): 38-42 |
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| Authors: | Zhao Weiming Tang Chunjiu Jiang Xueyin Zhang Zhilin Xu Shaohong |
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| Affiliation: | Department of Materials Science, Shanghai University Jiading Campus, Shanghai 201800 |
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| Abstract: | High brightness thin film electroluminescent devices with ZnS: Tb active layer were prepared by high frequency sputtering method. The impact cross section of Tb3+ was calculated by measuring the decay time, quantum efficiency and the dependence of the two emisson spectrum intensities ratio on applied voltage. The hot electron distribution of ZnS: Tb was studied and compared with that of ZnS: Mn to find out the probable reason of the difference of their efficiency. |
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| Keywords: | ZnS:Tb thin film Electroluminescence quantum efficiency hot electron distribution |
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