| Ga0.51In0.49P的MOCVD生长特性研究 |
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| 引用本文： | 缪国庆,朱景义.Ga0.51In0.49P的MOCVD生长特性研究[J].发光学报,1996,17(1):43-46. |
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| 作者姓名： | 缪国庆 朱景义 |
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| 作者单位： | 中国科学院长春物理研究所, 长春130021 |
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| 基金项目： | 国家“863”新材料领域课题 |
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| 摘 要： | 本文报导了用国产常压MOCVD系统生长GaInP材料.研究GaInP的生长特性,用光致发光、扫描电镜、X光双晶衍射对材料进行表征.发现Ⅴ/Ⅲ比对GaInP的光学特性有很大影响.在温度680℃,Ⅴ/Ⅲ比为90的条件下得到Ga0.51In0.49P外延层的光致发光谱的半高宽为26meV,这是目前报导的最好结果.Ga0.51In0.49P的本征载流子浓度为1.1×1015cm-3,晶格失配为4×10-4.
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| 关 键 词： | MOCVD GaInP生长 Ⅴ/Ⅲ比 |
| 收稿时间： | 1995-01-25 |
THE GROWTH CHARACTERISTIC STUDY OF Ga_(0.51)In_(0.49)P BY MOCVD |
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| Miao Guoqing, Zhu Jingyi, Li Yuqin, Hong Chunrong, Yuan Jinshan.THE GROWTH CHARACTERISTIC STUDY OF Ga_(0.51)In_(0.49)P BY MOCVD[J].Chinese Journal of Luminescence,1996,17(1):43-46. |
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| Authors: | Miao Guoqing Zhu Jingyi Li Yuqin Hong Chunrong Yuan Jinshan |
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| Institution: | Changchun Institute of Physics, China Academy of Sciences, Changchun 130021 |
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| Abstract: | GaInP have been grown on GaAs substrates by metalorganic chemical vapor deposition(MOCVD) in a horizontal, atmospheric pressure reactor. The growth characteristic of GaInP wes studied by PL measurement, SEM, X-ray double crystal diffraction.Ⅴ/Ⅲ ratio influenced the optics quality of GaInP. Featureless surface morphologies Ga0.51In0.49P were obtained. At a Ⅴ/Ⅲ ratio of 90, temperature was 680℃, the epilayer had photoluminescence(PL) FWHM of 26meV at 300K, the best reported results to date. The background carrier concentration of Ga0.51In0.49P was 1.I×1015cm-3. The mismatch of Ga0.51In0.49P was 4×10-4. |
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| Keywords: | MOCVD GaInP growth Ⅴ/Ⅲ ratio |
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