| Excitation Intensity Dependence of Free-exciton Transitions in GaN Grown by Low-pressure Metalorganic Chemical Vapor Deposition |
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| 作者姓名： | G.D.Chen |
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| 作者单位： | G.D.Chen(Department of Applied Physics，Xian Jiaotong University，Xian 710049，China)M. Smith J.Y. Lin H.X. Jiang(Department of Physics，Kansas State University，Kansas 66506，USA)S.E.Choi(Department of Physics，University of Inchon，Inch |
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| 摘 要： | ＥｘｃｉｔａｔｉｏｎＩｎｔｅｎｓｉｔｙＤｅｐｅｎｄｅｎｃｅｏｆＦｒｅ┐ｅｘｃｉｔｏｎＴｒａｎｓｉｔｉｏｎｓｉｎＧａＮＧｒｏｗｎｂｙＬｏｗ┐ｐｒｅｓｕｒｅＭｅｔａｌｏｒｇａｎｉｃＣｈｅｍｉｃａｌＶａｐｏｒＤｅｐｏｓｉｔｉｏｎＧ．Ｄ．Ｃｈｅｎ（Ｄｅｐａｒ...
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| 收稿时间： | 1997/4/18 |
Excitation Intensity Dependence of Free-exciton Transitions in GaN Grown by Low-pressure Metalorganic Chemical Vapor Deposition |
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| Abstract: | The excitation intensity dependence of photoluminesecence (PL) of free exciton (FX) A and B in undoped GaN single crystal grown by metal organic chemical vapor deposition (MOCVD) is briefly reported in this letter. The variation of emission intensity, line width, energy peak positions and recombination lifetime with excitation intensities is presented and discussed. The results show that the sample is very pure and the recombination lifetime of FX in the GaN crystal is governed by the radiative processes. |
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| Keywords: | photoluminescence metal organic chemical vapor deposition GaN crystal free exciton recombination |
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