| 非掺SI-GaAs单晶热处理的研究 |
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| 引用本文： | 徐玉忠,唐发俊,杨连生. 非掺SI-GaAs单晶热处理的研究[J]. 微纳电子技术, 1997, 0(5) |
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| 作者姓名： | 徐玉忠 唐发俊 杨连生 |
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| 作者单位： | 电子工业部第四十六研究所 |
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| 摘 要： | 采用闭管Ａｓ气氛保护高－低－中温热处理方法进行非掺ＳＩ－ＧａＡｓ单晶热处理的研究，结果表明晶体的特性有明显的改善，一般晶体的迁移率可提高一倍以上，在Φ３英寸非掺ＳＩ－ＧａＡｓ单晶研究中，其晶体的电阻率不均匀性≤１５％；ＥＬ２ＲＳＤ≤５％；ＰＬ－Ｍａｐ－ｐｉｎｇ≤９％。
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| 关 键 词： | 非掺SI－GaAs As气氛 高－低－中温热处理工艺 |
Study on the Thermal Treatment of the Undoped SI GaAs Crystal |
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| Xu Yuzhong,Tang Fajun,Yang Liansheng. Study on the Thermal Treatment of the Undoped SI GaAs Crystal[J]. Micronanoelectronic Technology, 1997, 0(5) |
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| Authors: | Xu Yuzhong Tang Fajun Yang Liansheng |
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| Abstract: | In this paper,the thermal treatment of undoped SI GaAs crystal by high low mid temperature annealing technologies in the ambient of As atomsphere is studied.The results showed that the characteristics of the crystal were greatly improved and the mobility of the common crystal was increased by a factor of 2 or more.For 3 inch undoped SI GaAs crystal,its inhomogenity is better than 15% for resistivity,RSD≤5% for EL2 and PL mapping≤9%. |
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| Keywords: | Undoped SI GaAs crystals As atomsphere High low mid temperature annealing technologies |
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