Effect of localized-exciton energy relaxation on the emission spectrum of ZnS-ZnSe single quantum wells |
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Authors: | N V Bondar’ |
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Institution: | (1) Institute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 144, Kiev, 258650, Ukraine |
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Abstract: | A study is reported on the dependence of exciton photoluminescence spectra of ZnS-ZnSe quantum wells with different localization-center concentrations on the excitation intensity and temperature. The shape of the experimental low-temperature photoluminescence band is shown to agree well with that calculated in a model of exciton hopping to the nearest localization center and in one that takes into account transitions of a localized exciton to all centers in its local environment. The parameters characterizing localized excitons in these quantum structures of a submonolayer thickness have been determined. |
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