基片温度和退火对CdIn2O4薄膜光学性质和载流子浓度的影响

对射频反应性溅射Cd In合金靶制备的透明导电CdIn2 O4薄膜 ,研究了基片温度及沉积后在氩气流中退火对薄膜的透射、反射和吸收光谱 ,光学常数和载流子浓度的影响。结果表明 :提高基片温度减少了薄膜的载流子浓度 ,退火增加了薄膜的载流子浓度。随着基片温度提高 ,薄膜折射率n和消光系数κ的短波峰将逐渐蓝移 ,而退火使其出现红移。基片温度和退火对薄膜光学常数的影响与其对薄膜载流子浓度的影响是一致的。在制备CdIn2 O4这样一种对于沉积方法和沉积条件极为敏感的透明导电薄膜的沉积过程中 ,这一现象对于实时监控具有极为重要的意义。

Influences of Substrate Temperature and Annealing on Optical Properties and Carrier Concentration of CdIn2O4 Thin Films

The influences of the substrate temperature and post deposition annealing in an Ar gas flow on the transmission, reflection and absorption spectra, optical constants and carrier concentration of CdIn 2O 4 thin films, which was deposited by r.f reactive sputtering from a Cd In alloy target, are discussed. It shows that carrier concentration decreases when substrate temperature is increased, and concentration will increase after thin film is subjected to annealing. The peaks of refractive index n and extinction coefficient k undergo blue shift with increasing substrate temperature, and red shift occurs after thin film is annealed. This is in good agreement with the change of carrier concentration. It is of significance to monitoring in situ the film process in the course of deposition of the transparent conducting thin films such as CdIn 2O 4 which are sensitive to deposition methods and deposition conditions.