三氧化钨电致变色薄膜最佳掺杂含量的理论计算

介绍电致变色薄材料最佳掺杂含量的定量理论。该理论建立了电子薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系，给出了一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系，进而得到了一个最佳掺杂含量的表达式。分析三氧化钨电致变色薄膜材料的掺杂改性的实验结果，应用最佳掺杂含量表达式定量计算了三氧化钨以及三氧化钼电致变色薄膜材料的最佳掺杂含量，定量计算的结果与实验数据相符合。该理论方法也适用于其他材料最佳掺杂粒子数分数的理论计算。

The Theoretical Calculation of Optimum Doping Content in Tungsten Trioxide Electrochromic Films

The quantitative theory of optimum doping content of transparent conductive films was introduced. In this theory, the relationship of one of the physical properties with crystal structure, preparation method and doping content was set up. The parabola equation that can be fixed to the test curve and has reliable physical meaning was given. The extreme value of this equation just determined the quantitative relationship between the optimum doping content, crystal structure and preparation method, and the expression of the optimum doping content was obtained accordingly. The experimental results of doping modified for WO 3 electrochromic films were analyzed. Using this expression to calculate the optimum doping content in WO 3 electrochromic films, the quantitative calculation results are in accordance with the experimental results. This theory is also appropriate for the optimum doping content problems of other materials.