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Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures |
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| Authors: | A Guillén-Cervantes Z Rivera-ÁlvarezM López-López A Ponce-PedrazaC Guarneros VM Sánchez-Reséndiz |
| Institution: | a Physics Department, CINVESTAV-IPN, Av. IPN 2508, Zacatenco, 07360 México, DF, Mexico b Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio, TX 78249, USA c Electrical Engineering Department, Solid State Electronic Section, CINVESTAV-IPN, Av. IPN 2508, Zacatenco, 07360 México, DF, Mexico |
| Abstract: | GaN thin films grown by MOCVD on (0 0 0 1) Al2O3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers. |
| Keywords: | MOCVD Field-emission SEM Hexagonal-shaped pits Surface spirals Photoluminescence |
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