Oxidation temperature dependent properties of MgO thin film on alumina |
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Authors: | S PatilVijaya Puri |
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Institution: | Thick and Thin Film Device Lab, Department of Physics, Shivaji University, Kolhapur, 416004, India |
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Abstract: | The magnesium oxide thin films were prepared by thermal oxidation (in air) of vacuum evaporated magnesium thin film on alumina. It was found that oxidation temperature (623 K, 675 K and 723 K) and thickness (103 nm and 546 nm) dependent effects were prominently manifested in the surface morphology. Electrical and microwave properties (8-12 GHz) of the MgO thin films were also carried out. X-ray diffraction showed orientation along (2 0 0) and (2 2 0) directions. Flowerlike morphology was observed from SEM and flake like morphology for films of higher thickness oxidized at higher temperatures. The magnesium oxide thin film showed NTC behavior. Microwave transmittance was found to increase with increase in oxidation temperature but was lower than alumina. Frequency and oxidation temperature dependent microwave permittivity was obtained. The microwave dielectric constant varied in the range 8.3-15.3. |
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Keywords: | Magnesium oxide thin film Oxidation temperature Morphology Resistivity Microwave transmittance Permittivity |
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