XPS and UPS study on band alignment at Pt-Zn-terminated ZnO(0 0 0 1) interface |
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Authors: | Petr Blumentrit,Michiko YoshitakeSlavomí r Nem&scaron á k,Taeyoung KimTakahiro Nagata |
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Affiliation: | a Advanced Electronic Materials Center, National Institute for Materials Science, Sakura 3-13, Tsukuba, Ibaraki 305-0003, Japan b Faculty of Mathematics and Physics, Charles University, V Holešovi?kách 2, 180 00 Prague 8, Czech Republic |
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Abstract: | The interface between Pt and Zn-terminated ZnO(0 0 0 1) was investigated by X-ray and ultra violet photoelectron spectroscopy in order to examine electronic band alignment. An angle-resolved X-ray photoelectron spectroscopy measurement of the clean ZnO(0 0 0 1) surface has revealed a downward band bending by 0.25 eV. The results of the valence band analysis show that the work function and the valence band maximum of clean ZnO(0 0 0 1) were 4.49 eV and 2.79 eV, respectively. Platinum was then deposited in several deposition steps onto a clean ZnO(0 0 0 1) surface up to 0.6 nm in thickness. After the deposition, the binding energy of Zn 2p doublet peak was shifted towards lower value by 0.77 eV, and the measured work function changed to 5.51 eV. As a result, the Schottky barrier height of Pt/ZnO(0 0 0 1) interface was 1.11 eV. |
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Keywords: | Zinc oxide Platinum oxide Band bending Schottky barrier height |
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