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The influences of plasma ion bombarded on crystallization, electrical and mechanical properties of Zn-In-Sn-O films |
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| Authors: | KJ Chen FY Hung SJ ChangJD Liao CC WengZS Hu |
| Institution: | a The Instrument Center, Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 701, Taiwan b Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan c Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan d Department of Materials Science and Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan |
| Abstract: | The quality of co-sputtering derived Zn-In-Sn-O (ZITO) film was adjusted by different gas (oxygen and argon) induced plasma ions bombarding (PIB) treatment. The result showed that the film conductivity could be improved after plasma bombardment. The increment of oxygen vacancies and plasma bombard-induced thermal energy were main reasons. Notably, the efficiency of Ar plasma bombarded for improved conductivity not only was better but also had a smoother surface morphology. Due to Ar ions will not react with metal atoms to form oxide and possessed a higher momentum. In addition, the O-rich layer on the ultra-surface not only was removed but also enhanced film reliability by plasma bombarded that could enhance the performance of optoelectronic devices. |
| Keywords: | Co-sputtering ZITO Plasma ions bombarded (PIB) Toughness |
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