A comparative study of solution based CIGS thin film growth on different glass substrates |
| |
Authors: | Se Jin Park Eunjoo LeeHyo Sang Jeon Se Jin AhnMin-Kyu Oh Byoung Koun Min |
| |
Affiliation: | a Clean Energy Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Republic of Korea b University of Science and Technology, 176 Gajung-dong, 217 Yuseong-gu, Daejeon 305-350, Republic of Korea c Photovoltaic Research Center, Korea Institute of Energy Research, 71-2 Jang-dong, Yuesong-gu, Daejeon 305-343, Republic of Korea d Department of Chemical and Biological Engineering, Korea University, Anam-dong Seongbuk-gu, Seoul 136-713, Republic of Korea |
| |
Abstract: | CuInxGa1−xSeyS2−y (CIGS) thin films were synthesized on glass substrates by a paste coating of Cu, In, and Ga precursor solution with a three-step heat treatment process: oxidation, sulfurization, and selenization. In particular, morphological changes of CIGS films for each heat treatment step were investigated with respect to the kinds of glass substrates: bare, Mo-coated, and F-doped SnO2 (FTO) soda-lime glasses. Very high quality CIGS film with large grains and low degree of porosity was obtained on the bare glass substrate. Similar morphology of CIGS film was also acquired on the Mo-coated glass except the formation of an undesired Mo oxide interfacial layer due to the partial oxidation of Mo layer during the first heat treatment under ambient conditions. On the other hand, CIGS film with much smaller grains and higher degree of porosity was gained when FTO glass was used as a substrate, resulting in slight solar to electricity conversion behavior (0.20%). Higher power conversion efficiency (1.32%) was attained by the device with the CIGS film grown on Mo-coated glass in spite of the presence of a Mo oxide impurity layer. |
| |
Keywords: | CIGS CuInxGa1-xSeyS2-y Substrates Solar cells Solution processes |
本文献已被 ScienceDirect 等数据库收录! |
|