Performance improvement of Sb2Te3 phase change material by Al doping |
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| Authors: | Cheng Peng Liangcai WuFeng Rao Min ZhuXuelai Li Bo LiuLimin Cheng Songlin FengPingxiong Yang Junhao Chu |
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| Institution: | a Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University, Shanghai 200241, PR China
b State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, PR China |
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| Abstract: | Al doped Sb2Te3 material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb2Te3 films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the amorphous thermal stability of the material. Al0.69Sb2Te3 material has a better data retention (10 years at 110 °C) than that of Ge2Sb2Te5 material (10 years at 87 °C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al0.69Sb2Te3 based device. |
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| Keywords: | Phase transformation Thin films Sb2Te3 XPS Thermal properties |
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