Periodic patterning of silicon by direct nanosecond laser interference ablation |
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Authors: | T. TaveraN. Pé rez,A. Rodrí guezP. Yurrita,S.M. OlaizolaE. Castañ o |
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Affiliation: | a CEIT and Tecnun (University of Navarra), Paseo Manuel Lardizábal, 15 20018, San Sebastián, Spain b CIC Microgune Paseo Mikeletegi 48, 20009 San Sebastián, Spain |
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Abstract: | The production of periodic structures in silicon wafers by four-beam is presented. Because laser interference ablation is a single-step and cost-effective process, there is a great technological interest in the fabrication of these structures for their use as antireflection surfaces. Three different laser fluences are used to modify the silicon surface (0.8 J cm−2, 1.3 J cm−2, 2.0 J cm−2) creating bumps in the rim of the irradiated area. Laser induced periodic surface structures (LIPSS), in particular micro and nano-ripples, are also observed. Measurements of the reflectivity show a decrease in the reflectance for the samples processed with a laser fluence of 2.0 J cm−2, probably caused by the appearance of the nano-ripples in the structured area, while bumps start to deteriorate. |
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Keywords: | Silicon Laser ablation Nanostructuring Interference Solar cells |
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