| V3X系d带相对移动量的配位场方法的计算 |
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| 引用本文： | 朱元贞,潘少华. V3X系d带相对移动量的配位场方法的计算[J]. 物理学报, 1983, 32(3): 411-416 |
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| 作者姓名： | 朱元贞 潘少华 |
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| 作者单位： | 中国科学院物理研究所 |
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| 摘 要： | 本文用配位场方法计算在D2d)晶场作用下,V3X(X=Si,Ga,Ge,Sb,Sn)超导化合物中d电子各态的附加势能,给出A-15超导化合物d带相对移动模型中的特征量——d子带相对移动量△E⊥——与晶格常数的解析关系及其数值结果。并用于磁化率的计算。关键词：
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| 收稿时间： | 1982-04-09 |
LIGAND FIELD CALCULATION OF THE RELATIVE DISPLACEMENTS OF THE d BAND IN V3X SYSTEM |
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| ZHU YUAN-ZHEN and PAN SHAO-HUA. LIGAND FIELD CALCULATION OF THE RELATIVE DISPLACEMENTS OF THE d BAND IN V3X SYSTEM[J]. Acta Physica Sinica, 1983, 32(3): 411-416 |
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| Authors: | ZHU YUAN-ZHEN and PAN SHAO-HUA |
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| Abstract: | By employing the method of ligand field theory, we calculated the additional potential energies of d electron states of V3X(X = Si, Ga, Ge, Sb, Sn) superconducting compounds, these energies are induced by the D2d) crystal field. We obtained the analytic relation between the. lattice constant and the relative displacement of d sublevels △E⊥, which is the characteristic quantity for the model of d band relative displacement. The numerical values of △E⊥ and the magnetic susceptibilities calculated by using them are also presented. |
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