Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits |
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Authors: | V I Blynskii O A Bozhatkin E S Golub A M Lemeshevskaya and S V Shvedov |
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Institution: | (1) Institut f?r Physikalische Elektronik, Universit?t Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany |
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Abstract: | We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated
circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the
sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained
by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n+ layer in the substrate. |
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