Modulated replica symmetry breaking schemes for antiferrimagnetic spin glasses

The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic (NM) metallic spacer. The effect of spin fluctuation in magnetic barrier, which plays an important role at finite temperature, is included by taking the mean-field approximation. It is found that, the tunnel magnetoresistance (TMR) and the electron-spin polarization depend strongly on the temperature and the applied voltage. The TMR and spin polarization at different temperatures show an oscillatory behavior as a function of the NM spacer thickness. Also, the amplitude of these oscillations is regularly reduced when the temperature increases. The maximum TMR value, varies approximately from 270 in reverse bias (at T = 0 K) to 25 in forward bias (at ).Received: 25 June 2004, Published online: 14 December 2004PACS: 72.25.Hg Electrical injection of spin polarized carriers - 73.23.Ad Ballistic transport - 73.40.Gk Tunneling