Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device |
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| Authors: | Zhang You-Run Zhang Bo Li Ze-Hong Lai Chang-Jin and Li Zhao-Ji |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | This paper proposes a thermal analytical model of current gain for
bipolar junction transistor-bipolar static induction transistor
(BJT-BSIT) compound device in the low current operation. It also
proposes a best thermal compensating factor to the compound device
that indicates the relationship between the thermal variation rate
of current gain and device structure. This is important for the design
of compound device to be optimized. Finally, the analytical model
is found to be
in good agreement with numerical simulation and experimental
results. The test results demonstrate that thermal variation rate of
current gain is below 10% in 25 °--85 ° and 20{\%} in
-55 °du--25 °. |
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| Keywords: | bipolar junction
transistor-bipolar static induction transistor thermal analytic
model current gain |
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