Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC |
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Authors: | Feng Zhang Weifeng Yang Hongji Qi Zhengxiu Fan |
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Affiliation: | a Physics Department, Xiamen University, Xiamen 361005, Fujian, PR China b Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Science, Shanghai 201800, PR China |
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Abstract: | Al2O3/SiO2 films have been deposited as UV antireflection coatings on 4H-SiC by electron-beam evaporation and characterized by reflection spectrum, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The reflectance of the Al2O3/SiO2 films is 0.33% and 10 times lower than that of a thermally grown SiO2 single layer at 276 nm. The films are amorphous in microstructure and characterize good adhesion to 4H-SiC substrate. XPS results indicate an abrupt interface between evaporated SiO2 and 4H-SiC substrate free of Si-suboxides. These results make the possibility for 4H-SiC based high performance UV optoelectronic devices with Al2O3/SiO2 films as antireflection coatings. |
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Keywords: | 42.79.Wc 81.15.Jj 78.40.&minus q 82.80.Ej |
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