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| 热湿存储环境下须状晶体的生长机理与影响因素 | |
| 引用本文： | Paolo Crema,林建乐,Peter Kuehlkamp. 热湿存储环境下须状晶体的生长机理与影响因素[J]. 电子工业专用设备, 2010, 39(5): 8-11 |
| 作者姓名： | Paolo Crema 林建乐 Peter Kuehlkamp |
| 作者单位： | 1. Atotech公司 2. 安美特化学有限公司 3. ST Microelectronics |
| 摘 要： | 纯哑锡表面的晶须特性已经成为IC封装中无铅焊接工艺实施的主要影响因素之一。由于其它替代方法,例如预先在引脚上镀Ni/Pd/Au层,会导致成本无法预估以及可靠性下降等问题,因此,目前的关注点是进一步减少纯锡表面须状晶体的生长。 |
| 关 键 词： | 须状晶体 生长机理 影响因素 |
Whisker Growth during Heat-Humidity Storage-Mechanism and Factors of Influence |
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| Juergen Barthelmes,Paolo Crema,LIN Jianle,Peter Kuehlkamp. Whisker Growth during Heat-Humidity Storage-Mechanism and Factors of Influence[J]. Equipment for Electronic Products Marufacturing, 2010, 39(5): 8-11 | |
| Authors: | Juergen Barthelmes Paolo Crema LIN Jianle Peter Kuehlkamp |
| Affiliation: | Juergen Barthelmes1,Paolo Crema1,LIN Jianle2,Peter Kuehlkamp3(3.ST Microelectronics) |
| Abstract: | The whisker propensity of pure matt tin layers has become one of the major concerns for the implementation of this technology as the lead-free solderable finish in IC assembly.While the main other alternative,preplated leadframes with Ni/Pd/Au,suffers from the disadvantages of unpredictable cost and reduced reliability,considerable attention is being given to further reduce the extend of whiskering from pure tin deposits. |
| Keywords: | Whisker Growth mechanism Influence factors |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |