| 电磁环境中电子器件的失效分析 |
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| 引用本文： | 张芳, 蔡金燕, 朱艳辉,.电磁环境中电子器件的失效分析[J].电子器件,2009,32(2). |
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| 作者姓名： | 张芳 蔡金燕 朱艳辉 |
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| 作者单位： | 1. 军械工程学院光学与电子工程系,石家庄,050003
2. 驻5413厂军代室,石家庄,050031 |
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| 摘 要： | 以现在应用较广泛的电子器件-MOS器件在电磁环境中的失效建模为例,针对MOS器件受到电磁脉冲和周期脉冲的冲击后,所表现出来的失效特征,得出它符合基于随机过程的退化失效模型所描述的结论.根据结论和两种电应力的特点,分别提出基于随机过程的失效建模和动态应力-强度干涉建模.通过模型的建立和分析,初步制定出电子器件失效的试验方案.
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| 关 键 词： | 退化失效 栅氧化层软击穿 随机过程模型 动态应力-强度干涉模型 电磁脉冲应力 |
Failure Analysis of Electron Device under Electromagnetic Environment |
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| ZHANG Fang,CAI Jin-yan,ZHU Yan-hui.Failure Analysis of Electron Device under Electromagnetic Environment[J].Journal of Electron Devices,2009,32(2). |
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| Authors: | ZHANG Fang CAI Jin-yan ZHU Yan-hui |
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| Institution: | ZHANG Fang1,CAI Jin-yan1*,ZHU Yan-hui21.Department of Optics , Electronics Ordnance Engineering College,Shijiazhuang 050003,China,2.The Military Representative Section Stayed in 5413 Factory |
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| Abstract: | MOSFET failure modeling is taken as an example for this electron device is more and more important.Aiming at the failure characteristic of MOSFET exposed to impact of electromagnetic pulse and the characteristic under period pulse,a conclusion that this conforms to degradation failure model based on stochastic process is obtained.According to this conclusion and characteristic of two kinds of electric stresses,modeling based on stochastic process and dynamic stress-strength interference modeling are put for... |
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| Keywords: | degradation failure gate oxide soft breakdown stochastic process model dynamic stress-strength interference model:electromagnetic pulse stress |
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