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Relationship between the ionic and electronic partial conductivities of co-doped LSGM ceramics from oxygen partial pressure dependence of the total conductivity
Authors:B. A. Khorkounov  H. Näfe  F. Aldinger
Affiliation:(1) Leibniz Institute for Solid State and Materials Research, PF 27 00 16, 01171 Dresden, Germany;(2) Pulvermetallurgisches Laboratorium, Max-Planck-Institut für Metallforschung, Heisenbergstraße 3, 70569 Stuttgart, Germany
Abstract:La0.8Sr0.2Ga0.85-x Mg0.15Co x O3±δ-materials (further cobalt-doped LSGM), where x varied from 0 to 0.20, were synthesized by means of the conventional powder route. The total conductivity of the La0.8Sr0.2Ga0.85-x Mg0.15Co x O3±δ samples was measured as a function of temperature (400–900 °C) and oxygen partial pressure$$(1times10^{-1},leq,p_{{rm O}_{2}} [{text{Pa}}],leq,1times10^{5})$$ by means of the impedance technique. The values of the oxygen ionic and the hole conductivities were determined from non-linear regression of the oxygen partial pressure dependence of the total conductivity. It was shown that the substitution of gallium by cobalt in the LSGM results in increasing either the oxygen ionic or the hole conductivity, although the increase of the hole conductivity due to the doping by cobalt is more significant than the increase of the oxygen ionic conductivity. The hole conductivity of the selected compositions was studied by oxygen permeation- and Hebb–Wagner-polarization measurements.
Keywords:Lanthanum gallate  Cobalt doping  Electrical conductivity  Ionic conductivity  Hole conductivity
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