Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD |
| |
Authors: | ZHENG Xinhe QU Bo WANG Yutian DAI Zizhong YANG Hui Liang Junwu |
| |
Institution: | Institute of Semiconductors, Chinese Academy of Sciences, |
| |
Abstract: | Microtwins in the 3C-SiC films grown on Si(001) by APCVD were analyzed in detail using an X-ray four-circle diffractometer. The Φ scan shows that 3C-SiC films can grow on Si substrates epitaxially and the epitaxial relationship is revealed as (001)3C-SiC//(001)Si,[111]3C-SiC//[111]Si. Other diffractions emerged in the pole figures of the (111) 3C-SiC. We performed the (1010)h-SiC and the reciprocal space mapping of the (002) plane of twins for the first time, finding that the diffractions at χ=15.8° result from not hexagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be 1%. |
| |
Keywords: | |
本文献已被 万方数据 等数据库收录! |
|