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| X射线二极管平响应滤片的制作 | |
| 引用本文： | 辛将,谢常青,李志超,朱效立,刘明,徐超,陈军宁. X射线二极管平响应滤片的制作[J]. 微纳电子技术, 2011, 48(1): 53-57. DOI: 10.3969/j.issn.1671-4776.2011.01.010 |
| 作者姓名： | 辛将 谢常青 李志超 朱效立 刘明 徐超 陈军宁 |
| 作者单位： | 1. 中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029;安大学电子科学与技术学院,合肥230039 2. 中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京,100029 3. 中国工程物理研究院激光聚变研究中心,四川绵阳,621900 4. 安徽大学电子科学与技术学院,合肥,230039 |
| 基金项目： | 国家重点基础研究发展计划项目(2007CB935302); 国家高技术研究发展计划(2008AA8040208); 国家自然科学基金(60825403) |
| 摘 要： | 针对X射线二极管平响应滤片的设计要求,采用电子束蒸发生长薄金层、紫外光曝光光刻、微电镀厚金层、体硅腐蚀制作镂空结构和等离子体刻蚀去掉PI等技术,成功制备了阵列结构的圆孔直径为5μm,周期为10.854μm,金层厚度分别为50,400nm的薄、厚两种金层滤片。电镀过程中采用台阶仪多次测量图形四周电镀厚度后取均值的方法得到尽可能准确的电镀厚金层。滤片交付实验后,在X光能量0.1～4keV取得的平响应曲线标准偏差与均值之比在13%以内,可以满足相关单位的具体物理研究实验要求。 |
| 关 键 词： | 微电镀 体硅腐蚀 等离子体刻蚀 X光平响应 紫外光曝光 |
Fabrication 0f X-Ray Diode Flat-Response Filters |
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| Xin Jiang,Xie Changqing,Li Zhichao,Zhu XiaoLi,Liu Ming,Xu Chao,Chen Junning. Fabrication 0f X-Ray Diode Flat-Response Filters[J]. Micronanoelectronic Technology, 2011, 48(1): 53-57. DOI: 10.3969/j.issn.1671-4776.2011.01.010 | |
| Authors: | Xin Jiang Xie Changqing Li Zhichao Zhu XiaoLi Liu Ming Xu Chao Chen Junning |
| Affiliation: | Xin Jiang1,2,Xie Changqing1,Li Zhichao3,Zhu XiaoLi1,Liu Ming1,Xu Chao2,Chen Junning2 (1.Key Lab of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China,2.School of Electronic Science and Technology,Anhui University,Hefei 230039,3.Research Center of Laser Fusion,China Academy of Engineering Physics,Mianyang 621900,China) |
| Abstract: | On account of the design requirement of the X-ray diode flat-response filter,the two filters of 50 nm thin gold layer and 400 nm thick gold layer with 5 μm circular hole diameter and 10.854 μm cycle,were successfully prepared by growing the thin gold layer with the electron beam evaporation,UV exposure photoetching,micro-electroplating the thick gold layer,bulk-Si etching to fabricate the hollow structure,and plasma etching to remove PI.In the course of micro-electroplating,the thick gold layer was obtained by the accurate electroplating through multiple measuring electroplate thickness all around the patterning with the step profiler and getting the mean value.After the physical experiment,the ratio of the standard deviation of the flat-response curve to the average value is less than 13% at 0.1~4 keV X-ray energy,which sa-tisfies the requirement of the relevant organization for the specific physical research. |
| Keywords: | micro-electroplating bulk-Si etching plasma etch X-ray flat-response UV exposure |
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