| 利用多孔硅层增强P型CZ硅中吸杂效率的一种新方法 |
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| 引用本文： | 张彩珍,王永顺,汪再兴.利用多孔硅层增强P型CZ硅中吸杂效率的一种新方法[J].半导体学报,2011,32(3):032002-4. |
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| 作者姓名： | 张彩珍 王永顺 汪再兴 |
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| 作者单位： | School;Electronic;Information;Engineering;Lanzhou;Jiaotong;University; |
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| 基金项目： | Project supported by the Scientific and Technological Development Plan of Lanzhou City of China(No.2009-1-1); the Natural Science Fund of Gansu Province(No.096RJZA091) |
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| 摘 要： | A new two-step phosphorous diffusion gettering(TSPDG) process using a sacrificial porous silicon layer(PSL) is proposed.Due to a decrease in high temperature time,the TSPDG(PSL) process weakens the deterioration in performances of PSL,and increases the capability of impurity clusters to dissolve and diffuse to the gettering regions.By means of the TSPDG(PSL) process under conditions of 900℃/60 min + 700℃/30 min,the effective lifetime of minority carriers in solar-grade(SOG) Si is increased to 14.3 times ...
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| 关 键 词： | 直拉单晶硅 牺牲层 多孔硅 吸气 太阳能电池 p型 高一 短路电流密度 |
| 收稿时间： | 8/17/2010 9:43:45 PM |
| 修稿时间： | 11/8/2010 1:27:52 PM |
A novel method to enhance the gettering efficiency in p-type Czochralski silicon by a sacrificial porous silicon layer |
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| Zhang Caizhen,Wang Yongshun and Wang Zaixing.A novel method to enhance the gettering efficiency in p-type Czochralski silicon by a sacrificial porous silicon layer[J].Chinese Journal of Semiconductors,2011,32(3):032002-4. |
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| Authors: | Zhang Caizhen Wang Yongshun and Wang Zaixing |
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| Institution: | Zhang Caizhen,Wang Yongshun,and Wang Zaixing School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China |
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| Abstract: | |
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| Keywords: | two-step phosphorous diffusion gettering effective lifetime porous silicon layer solar-grade Si |
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