CMOS源极跟随缓冲电路

提出用CMOS源极跟随缓冲电路以较少的电路段数快速驱动大电容负载．HSPICE模拟结果表明，在负载电容为基本栅电容的100倍及6000倍时,CMOS源极跟随缓冲电路具有高于多段倒相器缓冲电路的负载驱动能力，且占有面积小．从而较好地解决了高速驱动芯片内各种数据传输及外部负载的问题．该电路结构简单，易于实现，且制作工艺与标准CMOS工艺完全兼容．

A Novel CMOS Source-Follower Buffer Circui

A novel CMOS source-follower buffer circuit is presented,which has a faster drivability for large capacitance loads than the tapered inverter chains,due to the characteristic of the CMOS source follower.When driving the large capacitance that is 100 times/6000 times as high as the original capacitance by an elemental inverter,two-stage combined source-follower/inverter buffer is 15% faster than the faster tapered inverter-chain buffer of eight-stage,with　smaller wafer area.This circuit structure is simple and can　be realized by the standard CMOS process easily.