Optical reflectivity in A15 compounds |
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| Authors: | JA Benda TH Geballe JH Wernick |
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| Institution: | 1. Department of Applied Physics, Stanford University, Stanford, Calif. 94305, USA;2. Bell Laboratories, Murray Hill, New Jersey 07974, USA |
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| Abstract: | Optical reflectivity at normal incidence for a series of A15 compounds shows an absorption peak at 0.7 eV for V3Si and V3Ge and is attributed to a critical point in the joint density of states. No such peak was found in Ti3Sb and V3Pt. |
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