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Photoemission measurement of surface states for annealed silicon |
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| Authors: | J.E. Rowe |
| Affiliation: | Bell Laboratories, Murray Hill, New Jersey 07974, USA |
| Abstract: | Surface states on annealed silicon (111) and (100) surfaces were determined by comparing photoemission from clean and partially oxidized surfaces. Results are compared with previous photoemission measurements on cleaved surfaces. |
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