Variable-range hopping in a silicon inversion layer |
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| Authors: | M. Pepper S. Pollitt C.J. Adkins R.E. Oakeley |
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| Affiliation: | Cavendish Laboratory, Cambridge, UK;Allen Clark Research Centre, Plessey Co. Ltd., Caswell, Towcester, Northants, UK |
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| Abstract: | The low temperature conductance in the inversion layer of an MNOSFET shows a transition from activated to metallic conduction as the Fermi level is raised. The temperature dependence in the activated region is consistent with two-dimensional variable-range hopping and the minimum metallic conductivity, 4500 Ω-1m-1, agrees with a theoretical estimate based on Mott's formula. |
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