| AlGaN/GaN层叠结构插入层改善氮化镓基发光二极管抗静电性能研究 |
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| 引用本文： | 李志聪,李盼盼,王兵,李鸿渐,梁萌,姚然,李璟,邓元明,伊晓燕,王国宏,李晋闽.AlGaN/GaN层叠结构插入层改善氮化镓基发光二极管抗静电性能研究[J].半导体学报,2011,32(11):114007-3. |
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| 作者姓名： | 李志聪 李盼盼 王兵 李鸿渐 梁萌 姚然 李璟 邓元明 伊晓燕 王国宏 李晋闽 |
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| 作者单位： | 中科院半导体所 |
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| 基金项目： | 国家高技术研究发展计划 |
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| 摘 要： | 在GaN基发光二极管的uGaN与nGaN之间插入AlGaN/GaN层叠结构，增大了外延层的张应力，降低了外延层中的穿透位错密度，改善了外延材料的质量。对比了AlGaN/GaN层叠结构中不同Al组分对LED的抗静电能力的影响，含6.8%铝组分AlGaN/GaN层叠结构的LED人体模式抗静电能力提高到了6000V，合格率超过了95%。
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| 关 键 词： | AlGaN 发光二极管 放电容量 堆栈 III 氮化物 防静电 插入层 |
| 收稿时间： | 5/21/2011 4:44:05 PM |
| 修稿时间： | 6/14/2011 2:10:30 PM |
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer |
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| Li Zhicong,Li Panpan,Wang Bing,Li Hongjian,Liang Meng,Yao Ran,Li Jing,Deng Yuanming,Yi Xiaoyan,Wang Guohong and Li Jinmin.Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer[J].Chinese Journal of Semiconductors,2011,32(11):114007-3. |
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| Authors: | Li Zhicong Li Panpan Wang Bing Li Hongjian Liang Meng Yao Ran Li Jing Deng Yuanming Yi Xiaoyan Wang Guohong and Li Jinmin |
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| Institution: | Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Yangzhou Zhongke Semiconductor Lighting Company, Yangzhou 225009, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared. 6.8% Al composition in the stacks showed the highest electrostatic discharge (ESD) endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%. |
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| Keywords: | AlGaN/GaN stacks light-emitting diodes dislocation density ESD |
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