| 非掺杂半绝缘LECGaAs的光电流谱 |
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| 引用本文： | 杨瑞霞,胡恺生,周智慧,郭小兵.非掺杂半绝缘LECGaAs的光电流谱[J].光谱学与光谱分析,1999,19(1):22-24. |
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| 作者姓名： | 杨瑞霞 胡恺生 周智慧 郭小兵 |
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| 作者单位： | 1. 河北工业大学电子系,300130,天津
2. 天津电子材料研究所,300192,天津 |
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| 摘 要： | 研究了非掺杂半绝缘ＬＥＣＧａＡｓ的非本征室温（３００Ｋ）光电流谱，在０．４－０．７０９ｅＶ范围发现了一个光响应响应宽带Ｍ１。Ｍ１带在０．４６、０．４９、０．５６、０．６５和０．６９ｅＶ处出现五个峰，其中０．４６、０．４９、０．５６和０．６９ｅＶ峰的起始阈值分别为０．４４、０．４７、０．５１和０．６７ｅＶ。本文讨论了Ｍ１带的起源，提出了０．４４、０．４７和０．５１ｅＶ光电阈值与铜受主，ＥＬ３和氧施主
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| 关 键 词： | 光电流谱 深能级 场效应晶体管 |
Photocurrent Spectra of Undoped LECSIGaAs |
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| Ruixia YANG,Kaisheng HU,Zhihui ZHOU,Xiaobing GUO.Photocurrent Spectra of Undoped LECSIGaAs[J].Spectroscopy and Spectral Analysis,1999,19(1):22-24. |
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| Authors: | Ruixia YANG Kaisheng HU Zhihui ZHOU Xiaobing GUO |
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| Institution: | Hebei University of Technology, 300130 Tianjin. |
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| Abstract: | Extrinsic photocurrent spectra of undoped LECSIGaAs have been measured to investigate the deep levels in this material.A broad photocurrent response band M 1 ranging from 0 40 to 0 70 eV has been observed.M 1 band reveals five peaks at 0 46,0 49,0 56,0 65 and 0 69 eV,respectively.The onset thresholds for the 0 46,0 49,0 56 and 0 69 eV peaks are 0 44,0 47,0 51 and 0 67 eV,respectively.It is likely that M 1 band is due to different deep levels and each of these deep levels has a concentration larger than 10 14 cm -3 .The origin of M 1 band is discussed and possible associations of the 0 44,0 47 and 0 51 eV thresholds with copper acceptor,EL3 and oxygen donor are presented.The relationship between M 1 band and the photoresponse behavior of drain current of GaAs field effect transistor was also investigated. |
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| Keywords: | LECSIGaAs |
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