| 大尺寸化学Ni源金属诱导晶化多晶硅的研究 |
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| 引用本文： | 赵淑云,吴春亚,刘召军,李学冬,王中,孟志国,熊绍珍,张芳. 大尺寸化学Ni源金属诱导晶化多晶硅的研究[J]. 物理学报, 2006, 55(11): 6095-6100 |
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| 作者姓名： | 赵淑云 吴春亚 刘召军 李学冬 王中 孟志国 熊绍珍 张芳 |
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| 作者单位： | (1)科技部高技术研究发展中心，北京 100044; (2)南开大学光电子所，天津市光电子薄膜器件与技术重点实验室，教育部光电子信息科学与技术重点实验室，天津 300071 |
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| 基金项目： | 国家高技术研究发展计划(863计划);国家自然科学基金;天津市自然科学基金;国家留学回国人员科研项目 |
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| 摘 要： | 用无电电镀的化学方法，在VHF-PECVD沉积获得的非晶硅薄膜表面形成镍诱导源，在550℃下退火若干小时，可以诱导产生微米量级的多晶硅晶粒.用此法形成的镍源可以均匀地分布在非晶硅薄膜的表面.非晶硅薄膜上形成晶核的数量取决于镍溶液的浓度、pH值和无电电镀的时间等参量.当成核密度比较低时可以观察到径向晶化现象.用VHF-PECVD非晶硅薄膜作为晶化前驱物，晶化后多晶硅的最大晶粒尺寸可达到90μm.用此多晶硅试制的TFT，获得了良好的器件特性.关键词：金属诱导晶化化学源多晶硅薄膜晶体管
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| 关 键 词： | 金属诱导晶化 化学源 多晶硅 薄膜晶体管 |
| 文章编号： | 1000-3290/2006/55(11)/6095-06 |
| 收稿时间： | 2005-12-14 |
| 修稿时间： | 2005-12-142006-04-25 |
Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source |
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| Zhao Shu-Yun,Wu Chun-Ya,Liu Zhao-Jun,Li Xue-Dong,Wang Zhong,Meng Zhi-Guo,Xiong Shao-Zhen,Zhang Fang. Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source[J]. Acta Physica Sinica, 2006, 55(11): 6095-6100 |
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| Authors: | Zhao Shu-Yun Wu Chun-Ya Liu Zhao-Jun Li Xue-Dong Wang Zhong Meng Zhi-Guo Xiong Shao-Zhen Zhang Fang |
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| Affiliation: | 1. Institute of Photo- Electronics, The Tianjin Key Laboratory of Photo-electronlc Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology ( Nankai University, Tianjin University |
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| Abstract: | Nonv-electrical plating was employed to form nickel inducing source on the surface of α-Si thin film deposited by VHF-PECVD. It was observed that the nickel inducing source formed by this method appeared as “dots” uniformly distributed on the surface of a-Si thin film after annealed for several hours at 550℃. The quantity of “dot” on the a-Si was determined by Ni concentration in the solution, the PH value, and the plating times, etc. The lateral crystallization was observed if the density of “dots” is relatively low. Poly-Si with maximum grain size of 90μm was obtained from the original α-Si deposited by VHF-PECVD. High performance thin film transistor (TFT) monitors were fabricated using this poly-Si. |
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| Keywords: | metal induced crystallization chemical source poly-Si TFT |
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