Molecular dynamics simulations on the direct sputtering of Al2O3 insulating film in a magnetic tunneling junction |
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| Institution: | 1. Department of Fire Science, Wu Feng Institute of Technology, Chiayi 621, Taiwan;2. Department of Engineering Science, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan;1. College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China;2. Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116, China;3. College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073, China;1. Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan;2. Department of Bioscience & Biotechnology, Sejong University, Seoul, 143-747 Republic of Korea;3. Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore, Pakistan;4. Centre for Advanced Studies in Physics, Government College University, Lahore 54000, Pakistan;5. Physics & Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia;1. Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan;2. Institute of Industrial Biotechnology, GC University Lahore, Lahore 54000, Pakistan;3. Department of Electrical Engineering, Riphah International University, Islamabad, Pakistan;4. Centre of Excellence in Solid State Physics, University of the Punjab, Lahore 54590, Pakistan;1. College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;2. Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;3. School of Material Science and Engineering, Jiangsu University, Zhenjiang, 212013, China |
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| Abstract: | The molecular dynamics (MD) simulation is used to study the direct deposition of aluminum-oxide (Al2O3) to grow an insulating thin film on cobalt substrate in a magnetic tunneling junction (MTJ). The direct deposition of Al2O3 may produce a very thin film with very smooth surface and form an averagely oxidized insulator. A high magnetoresistance ratio is desired in an MTJ device, so that smooth surface and good structural integrity for the insulating thin film is anticipated. The MD simulation is an effective way in determining optimal processing parameters that can be used to fabricate high-quality MTJ devices. The Buckingham and many-body tight-binding potentials are applied in the MD simulations for different interactions between particles. The effects of the cluster size and the incident energy on the thin film’s surface morphology and Al2O3 purity are investigated. Some optimal parameters that could be used as the reference for practical processing purposes are derived. |
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