Semiconductor applications of nanoliter droplet methodology with total reflection x-ray fluorescence analysis |
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| Institution: | 1. Chemistry Division, Los Alamos National Laboratory, Mail Stop K484, Los Alamos, NM 87545, USA;2. Process Characterization Laboratory, International SEMATECH, Austin, TX 78741, USA;1. Department of Civil and Environmental Engineering, University of South Carolina, Columbia, SC 29208, USA;2. Department of Environmental Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-Gu, Seoul 01897, Republic of Korea;1. Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology, Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University, Changzhou, Jiangsu 213164, China;2. State Key Laboratory of PV Science and Technology, Trina Solar, Changzhou, Jiangsu 213031, China;3. Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China;1. Department of Biomedical Engineering, Wayne State University, Detroit, MI 48202, USA;2. Department of Biomedical Engineering, University of Michigan, Ann Arbor, MI 48109, USA;3. Biointerfaces Institute, University of Michigan, Ann Arbor, MI 48109, USA;4. Department of Biomedical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA;5. Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202, USA;2. The Department of Obstetrics and Gynecology, First Affiliated Hospital, Second Military Medical University, Shanghai, China (RG, LL);1. Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education, Chongqing University, Chongqing 400030, China;2. Institute of Engineering Thermophysics, Chongqing University, Chongqing 400030, China |
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| Abstract: | In this study, the nanoliter dried spot method was applied to semiconductor contamination analysis to enhance vapor phase decomposition processes with total reflection X-ray fluorescence detection. Nanoliter-sized droplets (10 and 50 nl) were deposited onto native silicon oxide wafer surfaces in a clean room environment from both single and multielemental standards containing various concentrations of iron in different matrices. Direct comparisons were made to droplets formed by conventional VPD with similar iron standards. Nanoliter dried spots could be reproducibly deposited and dried in air with typical drying times ranging from 20 s to 2 min depending on the nanoliter volume deposited, compared to VPD spots which have drying times ranging from tens of minutes to several hours. Both types of residues showed a linear relationship between Fe intensity and mass deposited. Variable angle experiments showed that both nanoliter and VPD deposits of single element standards were film-like in character, while residues formed from much more complex matrices and higher mass loadings were particulate in character. For the experimental conditions used in this study (30 kV, 100 mA), typical TXRF spectral Fe limits of detection were calculated to be on the order of picograms or ～1×1010 atoms/cm2 for a 0.8 cm2 X-ray excitation beam area for both nanoliter dried spots and VPD spots prepared from single elemental standards. Calculated Fe detection limits for 200 mm diameter silicon wafers used in this study were in the ～1×108 atoms/cm2 range. By using nanoliter sized droplets, the required sample volume is greatly reduced resulting in higher sample throughput than with conventional VPD methods. |
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