| 用于手机砷化镓MMIC射频开关的研制 |
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| 引用本文： | 蒋幼泉,陈继义,李拂晓,高建峰,徐中仓,邵凯,陈效建,杨乃彬.用于手机砷化镓MMIC射频开关的研制[J].固体电子学研究与进展,2002,22(3):326-328. |
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| 作者姓名： | 蒋幼泉 陈继义 李拂晓 高建峰 徐中仓 邵凯 陈效建 杨乃彬 |
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| 作者单位： | 南京电子器件研究所,210016 |
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| 摘 要： | 报道一种用于手机的高功率、低插损砷化镓 MMIC射频开关。该产品在 870～ 970 MHz下 ,线性功率容量 >3 3 d Bm,插入损耗 (IL) <0 .6d B,隔离度 (Iso)≥ 1 7d B,反向三阶交调 (PT0 1 )≥ 70 d Bm,控制电压 :(0 ,-4) V。
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| 关 键 词： | 砷化镓单片集成电路 双刀双掷开关 多栅场效应晶体管 |
| 文章编号： | 1000-3819(2002)03-326-03 |
| 修稿时间： | 2000年11月24 |
The Research on GaAs MMIC RF Switch for Handset |
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| JIANG Youquan,CHEN Jiyi,LI Fuxiao,GAO Jianfeng,XU Zhongchang,SHAO Kai,CHEN Xiaojian,YANG Naibin.The Research on GaAs MMIC RF Switch for Handset[J].Research & Progress of Solid State Electronics,2002,22(3):326-328. |
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| Authors: | JIANG Youquan CHEN Jiyi LI Fuxiao GAO Jianfeng XU Zhongchang SHAO Kai CHEN Xiaojian YANG Naibin |
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| Abstract: | This paper reports a newly developed GaAs MMIC RF switch which features high power and low insertion loss. In the frequency range from 870 MHz to 970 MHZ, the power handling is more than 33 dBm, insertion loss( I L) is less than 0.6 dB, isolation( I so ) is equal to or more than 17 dB, reverse third order intercept point ( P T01 ) is equal to or more than 70 dBm and control voltage is (0, 4) V. |
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| Keywords: | GaAs MMIC DPDT multi gate FET |
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