Theoretical Study on the Reaction Mechanism of SiCl_4 with H in the Gas Phase

1 INTRODUCTION Semiconductor silicon materials are vital for mi- croelectronic and information industry. Silicon has many advantages, for example, rich resource, out- standing quality and sophisticated processing tech- nology. So it has been widely used in semiconduc- tor industry. One of the key techniques of mo- dern microelectronic industry is epitaxial growth of single crystal thin film on single crystal silicon and its ba- cking materials. In the chemical vapour deposition of Si, g…

Theoretical Study on the Reaction Mechanism of SiCl4 with H in the Gas Phase

The reaction mechanism of SiCl4 with H2 has been studied theoretically using Gaussian 98 program at B3LYP/6-311G* level. Three different reaction paths (a, b, c) in the gas phase were obtained. The geometries, vibrational frequencies and energies of every stagnation point in the reaction channel were calculated and the mechanisms have been confirmed. The results show that path a has an activation energy of 79.12 kcal/mol, which was considered as the main reaction path. Comparably, paths b and c have the energy barriers of 125.07 and 136.25 kcal/mol, res- pectively. The reaction rate constant was calculated by TST method over a wide temperature range of 900～1600 K, which further confirmed that path a was the main reaction channel.