Calculation of the charge-carrier relaxation time, Hall factor, and differential thermal EMF for isotropic p-type polysilicon

A model of an isotropic polycrystal is considered. An approach based on the solution to the kinetic Boltzmann equation is proposed for calculation of the charge-carrier relaxation time at the potential barriers formed on the surfaces of crystallites in the p-type polysilicon. The Hall factor for charge-carrier scattering by these barriers in a weak magnetic field and the differential thermal EMF resulting from the hole scattering by the potential barriers formed on the crystallite surface are calculated. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 87–96, July, 2006.