| Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films |
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| 作者姓名： | 刘波 宋志棠 张挺 封松林 Chen Bomy |
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| 作者单位： | Research Centre of Functional Semiconductor Film Engineering Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Research Centre of Functional Semiconductor Film Engineering Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Research Centre of Functional Semiconductor Film Engineering Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Research Centre of Functional Semiconductor Film Engineering Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
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| 基金项目： | Project supported by the National High Technology Development Programme of China (Grant No 2003AA302720), Shanghai Nanotechnology Promotion Centre (0352nm016, 0359nm204, 0252nm084), China Postdoctoral Foundation (2003034308), K. C. Wong Education Foundation (Hong Kong) and Science and Technology Council of Shanghai (03dz11009). |
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| 摘 要： | Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous －Te－-Te－ stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb－Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb－Sb (Te_2) and (Sb_2) Sb－Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb－Sb (Te_2).
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| 关 键 词： | Ge2Sb2Te5 XPS RF XRD |
| 收稿时间： | 2004-04-14 |
Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films |
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| Liu Bo,Song Zhi-Tang,Zhang Ting,Feng Song-Lin and Chen Bomy.Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films[J].Chinese Physics B,2004,13(11):1947-1950. |
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| Authors: | Liu Bo Song Zhi-Tang Zhang Ting Feng Song-Lin and Chen Bomy |
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| Institution: | Research Centre of Functional Semiconductor Film Engineering Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
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| Abstract: | Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous －Te－-Te－ stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb－Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb－Sb (Te_2) and (Sb_2) Sb－Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb－Sb (Te_2). |
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| Keywords: | Ge_2Sb_2Te_5 structure Raman spectra XPS |
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