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Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives |
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| Authors: | T Marszalek A NosalR Pfattner J JungS Kotarba M Mas-TorrentB Krause J VecianaM Gazicki-Lipman C CrickertG Schmidt C RoviraJ Ulanski |
| Institution: | a Department of Molecular Physics and European Centre for Bio- and Nanotechnology, Technical University of Lodz, 90-924 Lodz, Poland b Institute of Mechanical Engineering, Technical University of Lodz, 90-924 Lodz, Poland c Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC) and (CIBER-BBN), Campus UAB, 08193 Bellaterra, Spain d European Synchrotron Radiation Facility, ESRF BP 220 F-38043, Grenoble Cedex, France e Karlsruher Institut für Technologie (KIT), Institut für Synchrotronstrahlung (ISS), 76344 Eggenstein-Leopoldshafen, Germany f Universität Würzburg, Physikalisches Institut (EP3), Am Hubland, D-97074 Würzburg, Germany g Universität Halle, Insitut für Physik, Von-Danckelmann-Platz 3, 06120 Halle, Germany |
| Abstract: | We report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO2/Si substrates. Then the optimum geometry was employed for the preparation of flexible OFETs using Parylene C as both substrate and dielectric layer yielding, in the best case, to devices with μFET = 0.1 cm2/V s. With the performed bending tests we determined the limit of curvature radius for which the performance of the OFETs is not deteriorated irreversibly. The investigated OFETs are sensitive to ambient atmosphere, showing reversible increase of the source to drain current upon exposition to air, what can be explained as doping of TTF derivative by oxygen or moisture. |
| Keywords: | Tetrathiafulvalene derivatives Organic field-effect transistors Thin films Organic transistor |
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