InGaAsP／InP异质结构材料组分,结构的准确测定与综合分析

采用Ｘ射线光电子能谱（ＸＰＳ）对ＩｎＧａＡｓＰ／ＩｎＰ异质结构金属有机化学蒸发沉积（ＭＯＣＶＤ）外延晶片作了表面元素组分定性、定量和深度分布分析。将其组分定量数据代入带隙经验公式，发现带隙的计算与用光压谱（ＰＶＳ）实验值十分吻合；但是代入晶体常数经验计算公式计算得到的失配率与由Ｘ射线双晶衍射（ＤＣＤ）测定的失配率却有明显差别。抽检的两个外延晶片的ＸＰＳ元素分析和元素的深度分布分析，以对比的方式展示两者元素的组成、化学状态在其表面和沿着深度方向的变化及其差异，由此得到的有关片子质量的正确判断，有力地证明了ＸＰＳ是研究ＭＯＣＶＤ外延膜材料的得力工具。

On the Composition and Structure of MOCVD InGaAsP/InP Films

The X ray photoelectron spectroscopy (XPS) has been employed for the qualitative,quantitative,chemical state and depth profile analysis of InGaAsP/InP films.The substitution of the quantitative data thus obtained in the empirical equation on band gap gives satisfactory results,which agree very well with the E g values obtained by photovoltaic spectroscopy.However,substitution of the data in the lattice constant empirical equation gives a value of mismatching ratio,which is quite different from that by double crystal X ray diffraction (DCD).The variation in the composition and chemical states along the depth provides an accurate judgment of the chip quality,indicating that XPS is a powerful tool for the study of MOCVD epitaxy material.