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InGaAsP/InP异质结构材料组分,结构的准确测定与综合分析
引用本文:王典芬,丁国庆.InGaAsP/InP异质结构材料组分,结构的准确测定与综合分析[J].分析测试学报,1997,16(3):1-5.
作者姓名:王典芬  丁国庆
作者单位:武汉工业大学材料研究与测试中心
摘    要:采用X射线光电子能谱(XPS)对InGaAsP/InP异质结构金属有机化学蒸发沉积(MOCVD)外延晶片作了表面元素组分定性、定量和深度分布分析。将其组分定量数据代入带隙经验公式,发现带隙的计算与用光压谱(PVS)实验值十分吻合;但是代入晶体常数经验计算公式计算得到的失配率与由X射线双晶衍射(DCD)测定的失配率却有明显差别。抽检的两个外延晶片的XPS元素分析和元素的深度分布分析,以对比的方式展示两者元素的组成、化学状态在其表面和沿着深度方向的变化及其差异,由此得到的有关片子质量的正确判断,有力地证明了XPS是研究MOCVD外延膜材料的得力工具。

关 键 词:InGaAsP/InP,X射线光电子能谱,带隙,失配率。

On the Composition and Structure of MOCVD InGaAsP/InP Films
Wang Dianfen,Ding Guoqin ,Wei Minjian,Sun WenhuaWuhan Communication Device Co.,Wuhan.On the Composition and Structure of MOCVD InGaAsP/InP Films[J].Journal of Instrumental Analysis,1997,16(3):1-5.
Authors:Wang Dianfen  Ding Guoqin  Wei Minjian  Sun WenhuaWuhan Communication Device Co  Wuhan
Institution:Wang Dianfen,Ding Guoqin *,Wei Minjian,Sun WenhuaWuhan Communication Device Co.,Wuhan 430074
Abstract:The X ray photoelectron spectroscopy (XPS) has been employed for the qualitative,quantitative,chemical state and depth profile analysis of InGaAsP/InP films.The substitution of the quantitative data thus obtained in the empirical equation on band gap gives satisfactory results,which agree very well with the E g values obtained by photovoltaic spectroscopy.However,substitution of the data in the lattice constant empirical equation gives a value of mismatching ratio,which is quite different from that by double crystal X ray diffraction (DCD).The variation in the composition and chemical states along the depth provides an accurate judgment of the chip quality,indicating that XPS is a powerful tool for the study of MOCVD epitaxy material.
Keywords:InGaAsP/InP  XPS  Band  gap  Mismatching  ratio  
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