Electron-phonon interaction and coupled phonon-plasmon modes |
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Authors: | L A Falkovsky |
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Institution: | (1) Landau Institute for Theoretical Physics, Russian Academy of Sciences, ul. Kosygina 2, Moscow, 117337, Russia |
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Abstract: | The theory of Raman scattering by the coupled electron-phonon system in metals and heavily doped semiconductors is developed with Coulomb screening and the electron-phonon deformation interaction taken into account. The Boltzmann equation for carriers is applied. Phonon frequencies and optic coupling constants are renormalized due to interactions with carriers. The k-dependent semiclassical dielectric function is employed instead of the Lindhard-Mermin expression. The results of calculations are presented for various values of the carrier concentration and the electron-phonon coupling constant. |
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