Positioning photonic crystal cavities to single InAs quantum dots

We have investigated the optical properties of planar photonic crystal cavities formed by removing a single hole from a two-dimensional square lattice of air holes etched through a thin GaAs slab. We have demonstrated cavity resonances with quality factors (Q’s) as high as 8500, using an internal light source provided by an ensemble of InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE). The high-Q modes are confined to a very small mode volume, V = 0.7(λ/n)³, making them attractive to study in the context of cavity quantum electrodynamics with single QDs, where a high is needed to observe the strong coupling between an electronic state of the dot and the optical cavity mode. To this end, we have developed an accurate and robust alignment technique that positions a photonic crystal cavity to a single QD with 25 nm resolution. We present the details of this new technology and demonstrate its effectiveness by strategically positioning a number of QDs within photonic crystal cavities at points where the electric field intensity is high.