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Electronic transport properties and Microstructures of TiO2:Co magnetic semiconductors
Authors:Hong-Qiang Song  Yong Wang  Shi-Shen Yan  Liang-Mo Mei  Ze Zhang
Affiliation:1. Department of Space Science and Applied Physics, Shandong University at Weihai, Weihai, Shandong 264209, China;2. School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China;3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;4. Beijing University of Technology, Beijing 100022, China
Abstract:TiO2:Co thin films of high Co concentration were investigated by the high resolution transmission electron microscopy, physical property measurement system and energy dispersive X-ray. The as-deposited films are amorphous magnetic semiconductors and we did not find any Co metal particles in them. The electronic transport process in the low-temperature range below 80 K could be described by the spin-dependent variable-range-hopping process. However, after the samples were annealed at 300 °C, large amounts of Co metal particles were observed to connect each other and the films show a metallic behavior. The origin of ferromagnetism of the thin films is also discussed.
Keywords:75.50.Pp   73.50.&minus  h   68.37.Lp
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