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Wanderung von SiAs im Temperaturgradienten ohne Zusatz eines Transportmittels – Experimente und Modellrechnungen
Authors:P Bolte  R Gruehn
Abstract:On the Migration of SiAs without using a Transport Agent – Experiments and Thermochemical Calculations SiAs migrates in a temperature gradient (T = 0.5 · (T1 + T2) = 850 to 1000°C) without adding a transport agent, into the cooler part of the silica ampoule. The migration rate depends on the temperature and the partial pressure of elemental arsenic in the silica tube. The migration rates were measured for various arsenic concentrations (0 ≤ n(As) ≤ 4 mmol/20 cm3) and for various mean transport temperatures (850 ≤ T le; 1000°C). In case of increasing the temperature the migration rate rises (e.g. T = 850°C, ?(exp.) = 0.006 mg/h; T = 1000°C, ?(exp.) = 0.044 mg/h). Adding arsenic (e.g. n(As) = 0.11 mmol, ?(exp.) = 0.067 mg/h; n(As) = 4.0 mmol, ?(exp.) = 0.82 mg/h), gives also the result of an increasing migration rate. Augmenting the pressure by adding argon as inert gas has only a small effect to the migration rate of SiAs. To explain the mechanism of the migration by using model calculations, the thermochemical data of the gaseous species SiAsg and SiAs3, g have to be estimated. According to model calculations an endothermic reaction like the following one is responsible for the migration of SiAs the region of the lower temperature: SiAss + 2 Asn, g = SiAs3, g (1 ≤ n ≥ 4).
Keywords:Silicon  arsenic  silicon arsenide  thermochemical calculations
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