Ion implantation effects on the microhardness and microstructure of GaN |
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Authors: | P. Kavouras M. Katsikini N. Vouroutzis C. B. Lioutas E. C. Paloura J. Antonopoulos Th. Karakostas |
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Affiliation: | Department of Physics, Aristotle University of Thessaloniki, GR54006 Thessaloniki, Greece |
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Abstract: | We study the effect of N+ and O+ implantation on the microhardness and the microstructure of epitaxially grown GaN. The microhardness is measured using a Knoop diamond indenter while information on the effect of implantation on the surface morphology, microstructure and electronic structure is provided by atomic force microscopy, cross-section transmission electron microscopy and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It is demonstrated that implantation increases the surface microhardness. A possible mechanism for the surface hardening effect is based on the formation of N interstitials that pin the dislocations and prohibit the plastic deformation. In addition to the hardening effect, the implantation induced N interstitials introduce a characteristic resonance in the NEXAFS spectra, at 1.4 eV below the absorption edge. |
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Keywords: | A1. Atomic force microscopy A1. Implantation A1. Microhardness A3. Near edge X-ray absorption fine structure B1. Nitrides |
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